EIC0910-4 updated 08/21/2007 9.50-10.50ghz 4-watt inter nally-matched power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised october 2007 features ? 9.50?10.50ghz bandwidth ? input/output impedance matched to 50 ohms ? +36.5 dbm output power at 1db compression ? 7.5 db power gain at 1db compression ? 30% power added efficiency ? -46 dbc im3 at po = 25.5 dbm scl ? 100% tested for dc, rf, and r th electrical characteristics (t a = 25 c) caution! esd sensitive device. symbol parameters/test conditions 1 min typ max units p 1db output power at 1db compression f = 9.50-10.50ghz v ds = 10 v, i dsq 1100ma 35.5 36.5 dbm g 1db gain at 1db compression f = 9.50-10.50ghz v ds = 10 v, i dsq 1100ma 6.5 7.5 db ? g gain flatness f = 9.50-10.50ghz v ds = 10 v, i dsq 1100ma 0.6 db pae power added efficiency at 1db compression v ds = 10 v, i dsq 1100ma f = 9.50-10.50ghz 30 % id 1db drain current at 1db compression f = 9.50-10.50ghz 1200 1300 ma im3 output 3rd order intermodulation distortion ? f = 10 mhz 2-tone test; pout = 25.5 dbm s.c.l 2 v ds = 10 v, i dsq 65% idss f = 10.50ghz -43 -46 dbc i dss saturated drain current v ds = 3 v, v gs = 0 v 2000 2500 ma v p pinch-off voltage v ds = 3 v, i ds = 20 ma -2.5 -4.0 v r th thermal resistance 3 5.5 6.0 o c/w note: 1. tested with 100 ohm gate resistor. 2. s.c.l. = single carrier level. 3. overall rth depends on case mounting. absolute maximum rating for efe symbols parameters absolute 1 continuous 2 vds drain-source voltage 15v 10v vgs gate-source voltage -5v -4v igf forward gate current 48ma 14.4ma igr reverse gate current -9.6ma -2.4ma pin input power 36dbm @ 3db compression tch channel temperature 175c 175c tstg storage temperature -65c to +175c -65c to +175c pt total power dissipation 25w 25w note: 1. exceeding any of the above ratings may result in permanent damage. 2. exceeding any of the above ratings may reduce mttf below design goals.
EIC0910-4 updated 08/21/2007 9.50-10.50ghz 4-watt inter nally-matched power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 2 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised october 2007 performance data typical s-parameters (t= 25c, 50 ? system, de-embedded to edge of package) v ds = 10 v, i dsq = 1100ma 0 1.0 -1.0 1.0 10.0 - 1 0 . 0 1 0 . 0 5.0 - 5 . 0 5 . 0 2.0 - 2 . 0 2 . 0 3.0 - 3 . 0 3 . 0 4.0 - 4 . 0 4 . 0 0.2 - 0 . 2 0 . 2 0.4 - 0 . 4 0 . 4 0.6 - 0 . 6 0 . 6 0.8 - 0 . 8 0 . 8 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s11 and s22 swp max 11ghz swp min 9ghz s[1,1] * EIC0910-4 s[2,2] * EIC0910-4 9 9.5 10 10.5 11 frequency (ghz) s21 and s12 -30 -20 -10 0 10 20 s21 and s12 (db) db(|s[2,1]|) * EIC0910-4 db(|s[1,2]|) * EIC0910-4 freq --- s11 --- --- s21 --- --- s12 --- --- s22 --- (ghz) mag ang mag ang mag ang mag ang 8.75 0.737 -144.630 2.269 -6.970 0.057 -49.810 0.470 -160.060 9.00 0.655 -169.280 2.531 -33.010 0.071 -78.500 0.435 168.080 9.25 0.549 164.010 2.683 -59.86 0 0.085 -105.960 0.411 133.320 9.50 0.444 134.710 2.765 -86.790 0.100 -134.450 0.408 99.190 9.75 0.357 104.470 2.755 -112.9 80 0.106 -161.110 0.411 66.750 10.00 0.289 72.550 2.727 -137.970 0.113 174.650 0.431 38.790 10.25 0.235 33.570 2.687 -163.3 20 0.124 150.320 0.447 11.850 10.50 0.191 -9.260 2.581 172.160 0.124 124.660 0.437 -12.860 10.75 0.179 -51.300 2.519 148.03 0 0.127 101.940 0.436 -35.330 11.00 0.182 -94.880 2.427 123.370 0.129 78.470 0.436 -60.600 11.25 0.183 -136.850 2.332 98. 400 0.131 53.300 0.431 -86.500
EIC0910-4 updated 08/21/2007 9.50-10.50ghz 4-watt inter nally-matched power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 3 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised october 2007 power de-rating curve and im3 definition power dissipation vs. temperature 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 case temperature (c) total power dissipation (w) safe operating region potentially unsafe operating region f1 f2 (2f1-f2) f1 f2 (2f2-f1) im3 pout pin ip 3 = pout + im3/2 third-order intercept point ip3 f1 or f2 (2f2 - f1) or (2f1 - f2) pin [s.c.l.] (dbm) pout [s.c.l.] (dbm) im3 typical power data (v ds = 10 v, i dsq = 1100 ma) typical im3 data (v ds = 10 v, i dsq 65% idss ) p-1db & g-1db vs frequency 32.00 33.00 34.00 35.00 36.00 37.00 38.00 9.4 9.6 9.8 10.0 10.2 10.4 10.6 frequency (ghz) p-1db (dbm) 6.00 7.00 8.00 9.00 10.00 11.00 g-1db (db) p-1db (dbm) g-1db (db) im3 vs output power f1 = 9.50 ghz, f2 = 9.51 ghz -65 -60 -55 -50 -45 -40 -35 -30 -25 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 pout [s.c.l.] (dbm) im3 (dbc ) im3 (dbc)
EIC0910-4 updated 08/21/2007 9.50-10.50ghz 4-watt inter nally-matched power fet specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 4 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised october 2007 packages outline dimensions in inches, tolerance + .005 unless otherwise specified EIC0910-4 (hermetic) EIC0910-4nh (non-hermetic) all dimensions in inches excelics yyww sn all dimensions in inches yyww excelics sn caution! esd sensitive device. caution! esd sensitive device. ordering information part number packages grade 1 f test (ghz) p 1db (min) im 3 (min) 2 EIC0910-4 hermetic industrial 9.50-10.50ghz 35.5 -43 EIC0910-4nh non-hermetic industrial 9.50-10.50ghz 35.5 -43 notes: 1. contact factory for military and hi-rel grades. 2. exact test conditions are specified in ?electrical characteristics? table. disclaimer excelics semiconductor reserves the right to m ake changes without further notice to any products herein to improve reliability, function or design. excelics does not assume any liability arising out of the application or use of any product or circuit described herein. life support policy excelics semiconductor products are not authoriz ed for use as critical components in life support devices or systems without the express written approval of excelics semiconductor, inc. as here in: 1. life support devices or systems are devices or system s which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labe ling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life suppo rt device or system, or to affect its safety or effectiveness EIC0910-4 EIC0910-4nh
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